Titanium doped Sapphire crystal is a most widely used crystal for wavelength tunable lasers. It is also an excellent medium capable of generating ultrashort pulse, high gain and high power lasing. Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency have been realized using TGT grown Ti: Sapphire can also meet current application such as in large aperture amplifiers ( diameter up to 50 mm) for high power generation and laser fusion etc.

We supply large-sized (Dia.120 x 80 mm) Ti:Sapphire crystal free of light scatter and with dislocation density less than 102 cm-2 by using the growth method of Temperature Gradient Technique (TGT). TGT is characterized by the capabilities of growing (0001) oriented sapphire with high doping level (a490=7.5 cm-1) high gain, and high laser damage threshold.

Crystal structure:

 Hexagonal

Lattice constants:

 a=4.758, c=12.991

Density:

 3.98 g/cm3

Melting point:

 2040 ^oC

Mohs hardness:

 9

Chemical formula:

 Ti³⁺: Al₂O₃

Thermal conductivity:

 52 W/m/k

Specific heat:

 0.42 W/ s/g/k

Laser action:

 4-Level Vibronic

Fluorescence lifetime:

 3.2m s (T=300K)

Tuning range:

 660 - 1050 nm

Absorbtion range:

 400 - 600 nm

Emission peak:

 795 nm

Absorption peak:

 488 nm

Refractive index:

 1.76 @ 800 nm###