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The new diode pumped Q-switched lasers with high average power and
with circular beam profile are well suited for precision machining micro features in all types
of materials. Their short pulse length results in a minimal heat-affected zone. Typical applications are drilling of solar wafers and processing of
glass at high speed.
The new diode pumped Q-switched lasers line shaped Top-hat profile
are the ideal sources for large area ablation of thin layers for example in photovoltaic and in
car industry and for annealing to generate thin micro crystalline layers in display industry.
The new diode pumped Q-switched lasers with square Top-Hat beam profile are especially
favourable for structuring and ablation of conduction layers or dielectric layers for production
of thin film solar cells, crystalline solar cells and flat display panels, etc. Their Top-Hat
beam profile and short pulse length guarantee homogeneous ablation without beam overlap, highly
efficient use of pulse energy and low thermal damage of substrates.
As with all INNOSLAB laser product families, the new diode
pumped Q-switched lasers adapt the proved design with rugged construction and sealed laser heads.
They are superior stable and reliable.
Their high flexibility in beam profile enables customized laser solutions
based on standard proved system technology and design, tailored to the customer's specific
requirements.
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Circular Gaussian beam with M2 < 1.5
