New Products

 
High Power and high Pulse
Energy Q-switched Lasers
Power up to 600W (HD)

Nd doped
phosphate laser glasses

BBO Pockels Cell
Q-Switches

For more information
please contact

TOPLENT PHOTONICS
info@toplent.com
http://www.toplent.com
 

 

Diode pumped Q-switched INNOSLAB Lasers

IS -Series Lasers

BX - Series Lasers

HD - Series Lasers

 

 Press release of EdgeWave GmbH 07.2007 - high power HD-series q-switched INNOSLAB lasers

 
EdgeWave INNOSLAB laser is a new generation of laser beam sources. The new diode pumped Q-switched lasers are highly flexible in beam profile, from circular Gaussian beam profile, through line shaped one dimensional Top-Hat, to two dimensional Top-Hat with square cross section, together with other outstanding features of the INNOSLAB design make the new INNOSLAB Q-switched Laser ideal choice for industrial and scientific applications.
   
The Unique INNOSLAB Laser Technology:
It based on the unique INNOSLAB laser technology. Through an optimal combination of slab shaped laser crystal, line shaped diode laser beam, large area conduction cooling and hybrid-resonator design, INNOSLAB diode pumpd Q-switched lasers possess unification of special features not found in other types of laser:

IS-Series Lasers

Power up to 200 W

BX-Series Lasers

Power up to 40 W

HD-Series Lasers

Power up to 600 W NEW!

 
The Tailored Product - Diode pumped Q-switched INNOSLAB Lasers
Standard products portfolio encompasses electro-optical Q-switched INNOSLAB lasers with various laser medium, pulse energy and output power and a choice of wavelengths:

High pulse repetition rate, up to 100 kHz
High beam quality: M2<2
Short pulse length, as short as 4ns
Peak power up to 4 MW
High pulse energy. up to 30 mJ
High average power, up to 600 W
Wavelength 1064,532,355, 266 nm

  

A distinguished and enabling feature of INNOSLAB laser is the tailored beam profile: from circular Gaussian, through line shaped one dimensional Top-Hat to square two dimensional Top-Hat.
INNOSLAB Q-switched lasers with Top-Hat beam profile are especially favorable for structuring and ablation of conduction layer or dielectric layers for production of thin film solar cells, crystalline solar cells and flat display panels, etc. Their Top-Hat beam profile and short pulse length guarantee homogeneous ablation without beam overlap, highly efficient use of pulse energy and low thermal damage of substrates. Frequency doubled and tripled INNOSLAB lasers with line shaped one dimensional Top-Hat are ideal choice for pumping of dye lasers. We are able to offer customized INNOSLAB Q-switched lasers based on the standard system technology and design, tailored to the customer specific applications and requirements
 
Favourable Applications of INNOSLAB Q-switched Lasers:
INNOSLAB technology is suitable for an immense variety of applications. Ideally placed wherever there is a need for high-quality results, rapid processing and innovative techniques.

Drilling of glass

Manufacturing of solar-cells

High-speed-LIF 

with a dye-laser

Separation of PCB components

 
Display structuring of conduction layer, sequential lateral crystallization of SiAutomobile industry
   the manufacture of fuel injection valves
Electronics industry drilling and cutting of printed circuit boards
Photovoltaic scribing, drilling and cutting of Si-wafer, ablation of conduction or dielectric layers of
   thin film solar and crystalline Si solar cells
Scientific pumping of dye laser, pumping of OPO and Ti:Saphire laser, particle imaging velocimetry
Glass industry micro drilling and high through put subsurface engraving
Toolmaking mechanical engineering 3D rapid prototyping via ablation
 

 
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