LSAT (Lanthanum Strontium Aluminum Tantalum oxide) crystal is a newly developed multi-functional substrate for high Tc super conductive film. It is grown by Czockralski method and good quality by accurate controlling of the temperature distribution and growth rate. LSAT crystal has less structure defect, no domain, no twin structure. It also has low dielectric loss in microwave band.

Sapphire (Al₂O₃) crystal substrate has a combination of optical and physical properties that make it best choice for a variety of demanding applications.It has good thermal properties, excellent electrical and dielectric properties. We supply high quality and low cost Sapphire crystal substrate  

The lattice parameter of Lithium Dioxogallate (LiGaO2) and Lithium Aluminium Oxide (LiAlO2) crystal can match with the Gallium Nitride film very well. The mismatch coefficients are 0.2% and 1.4% only for LiGaO2 and LiAlO2, much smaller than that of the common used substrates such as <0001> sapphire (14%), <100> MgO (3%), <0001> SiC (3.5%). The Gallium Nitride film is a very important material for blue, violet, UV and white LED. A substrate material that matches the film to be grown well is very important to get a nice GaN epitaxial film.